• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A compression-assembled device has similar pole pieces which are electrically insulated from one another by an outer insulation ring and, in operation, press against the opposing surfaces of a semiconductor device. The base of the insulation ring is secured to one of the pole pieces, and its other end, and the other pole piece have thin flexible flanges extending from their peripheries and the flanges are connected to one another to mechanically secure the assembly together. One of the flanges has several upturned lips on its circumference which are used to receive and center the other flange. A flexible insulation ring surrounds a semiconductor wafer and locates it between the pole pieces. The ring with the wafer is pressed into the outer insulation ring and thus prevents the wafer from moving within the pole pieces when the pole pieces are not under compression forces.
    公开号:SU845810A3
    申请号:SU762364901
    申请日:1976-06-02
    公开日:1981-07-07
    发明作者:В.Бичковски Мичислав
    申请人:Интернэшнл Ректифайер Корпорейшн (Фирма)；
    IPC主号:
    专利说明:

    The invention relates to the field of semiconductor devices, in particular to the design of power semiconductor devices for high currents. 5
    Known semiconductor devices containing a semiconductor wafer sandwiched between the anode and cathode electrodes and located in an insulating ring connected ring-jq metal flanges with electrodes GP ·
    This device does not provide means for centering the upper electrode relative to the insulating and the ring, which complicates the assembly of the device.
    The closest technical solution is a semiconductor device containing a semiconductor 20 plate, sandwiched between the anode and cathode electrodes provided with annular flanges, and an insulating ring surrounding the semiconductor plate and parts of the electrodes and having
    I>
    odsred—
    from. OEP g Gozo schionplas2 one side annular Flanagan connected to the annular flange> Foot electrode and provided · stvom for their centering relative to one another, and on the other hand <union of the annular flange other electrode, wherein between the insulator: nym ring and semiconductor ooze a domed body made of elastic flexible insulating material is located, in which at least a part of one of the fiTJ electrodes adjacent to the semiconductor wafers is mounted.
    A disadvantage of the known device is the difficulty in mounting the electrodes and the insulating ring, since during assembly, the electrodes can move relative to each other and damage the semiconductor wafer or control terminal, which reduces the reliability of the device.
    The aim of the invention is to simplify installation and increase reliability.
    πο845810 4
    The goal is achieved in that in a semiconductor device comprising / a semiconductor wafer sandwiched between the anode and cathode electrodes provided with annular flanges, and 5 an insulating ring surrounding the semiconductor wafer and parts of the electrodes and having on one side an annular flange connected to the annular flange of one of electrodes and equipped with means for centering them relative to each other, and on the other hand connected to the annular flange of the other electrode, while between the insulating ring and the half a dome-shaped body made of elastic flexible insulating material is located on the water plate, some at least a portion of one of the electrodes adjacent to the semiconductor plate 20 is installed, the centering means is made in the form of three legs displaced around the circumference and upworn upwards.
    In addition, the domed body 25 may have a groove through which the control terminal of the semiconductor wafer is passed.
    The dome-shaped body on the side of the insulating ring is provided with recesses of 30 cars.
    In FIG. 1 shows a device, a cross section; in FIG. 2 upper electrode with a second embodiment, a flange, cross section 35; in FIG. 3 - lower electrode with an insulating ring with a second variant of the flange, cross section; in FIG. 4 - domed body with recesses, top view; in Fig.5-40 device c. modified flexible insulating ring, cross section,
    The semiconductor device (Fig. 1) 45 comprises a semiconductor wafer 1 sandwiched between the upper cathode 2 and, accordingly, the anode 3 electrodes. In the cathode electrode 2 there is a central hole 4 and a flexible conductive flange 5 of relatively thin material, which is soldered to the outer periphery of the electrode 2. The anode electrode 3 is basically similar to the cathode electrode 2 and also has 55 central hole 6, and its the outer surface is connected with a flexible flange 7, for example, by soldering.
    The semiconductor wafer I is placed in an insulating ring 8 made, for example, of ceramic, the outer surface of which is corrugated to increase the distance of electrical leakage, and its upper and lower surfaces are correspondingly metallized. The upper surface of the ring 8 is connected by soldering to the flange 9, which has a section 10.
    A conductive tube 11 passes through the wall of the ring 8, the outer end of which is sealed with a conductive plug 12. Through the tube 11, the internal area of the assembled device is pumped out and, if necessary, filled with inert gas after the device is assembled. After that, the tube can serve as a connection point for the control terminal that extends outside the ring 8.
    A small strip 13 of nickel-plated copper is welded or soldered to the upper part of the tube 1 1 to form a relatively large mass of metal, which can, for example, be provided by ultrasonic treatment of the aluminum control terminal of the device, which is mounted inside the pressure-assembled housing.
    The flange 9 is equipped with three short legs turned upside down and arranged around the circumference (two of them are shown in the drawing - 14 and 15). The tab 15 is simply the upwardly directed portion of the outwardly bent section 16, which is a connecting clip, for example, for a test connection to the upper electrode 2.
    These three tabs facing up serve as a centering means for mounting the flat flange 5 of the upper electrode 2 when mounting the electrodes relative to each other. The diameter of the upper flange 5 is approximately equal to the diameter formed by the circle, which includes turned upwards legs 14 and 15.
    The device also contains a domed body 1l f made of an insulating, elastic and flexible material, for example, silicone rubber. The inner diameter of the dome-shaped body 17 is approximately equal to the outer diameter of the semiconductor wafer 1, so that the latter can be installed in the ring 17 before assembly. The outer diameter of the wall of the ring 17 is chosen slightly larger than the inner diameter of the ring 8, so that the ring 17 can be mounted with force. into the ring 8. At the base of the ring 17, a groove 18 is made, through 5 which the control terminal 19 can pass. In addition, jio the outer surface of the ring 17- there are grooves (Fig. 4) that facilitate compression of the ring when mounting the semiconductor wafer between the electrodes. The grooves on the ring 17 also allow to eliminate unevenness in the dimensions of the device, providing a gap for the ring at elevated temperatures without creating 15 vertical deformation and providing conditions for a uniform internal gas pressure in the device at all temperatures.
    During assembly of the device, first, a semiconductor wafer 1 is installed in the ring 17. The inner diameter of the hole in the ring 17 has such a contour for mounting the upper electrode 2 so that the latter can 25 engage with the upper surface of the plate 1 as necessary. Then, the plate 1 and the ring 17 are pressed into The insulating ring 8 until the lower surface of the plate 1 is in good contact with the upper surface of the electrode 3. Then the plate is safely held inside the bowl formed by the lower electrode 3 surrounding m insulating ring 35 8 and the lower flange 7. In this case, due to the elasticity of the flexible ring 17 eliminates the risk of damage to the plate 1 due to shock and shock during assembly. The control terminal 40, which is a very fragile element, can be soldered to the conductive tube 11 using strip 13 on ring 8, i.e. the connection of the control terminal of the plate with the 45 control terminal of the housing is carried out after the elements to be connected are properly and finally brought together. fifty
    Then the upper electrode is installed in the position in which it is directed in the center by means of an opening in the body 17, while the electrodes 2. 3 and 55 are automatically centered The relative each other in relative landing flange 5 facing upwards and the foot 14 'of the flange 15, soldered to the ring 8 and, if necessary, regulated pivotally in an opening 17 of the ring.
    Then, to fix each other and create a seal, the engaging tabs 14, 15 and the edges of the flange 5 and section 16 are connected by corresponding contact welding.
    During the closing of the device with the upper electrode, the risk of damage to the semiconductor wafer I and the fragile control terminal 19 is eliminated.
    After welding, the semiconductor wafer 1 is firmly mounted in the required place relative to the surfaces of both electrodes, regardless of the displacement of the latter under the action of compression or tension. This prevents accidental movement or rotation of the plate 1 relative to the electrodes 2 and 3 and the ring 8, which can cause accidental breakdown of the control terminal 19 or other corresponding damage.
    Flange 5 may be made in the form of a relatively flat metal element. If necessary, the flange 5 may have the shape depicted in FIG. 2. To the upper electrode 2 (Fig. 2), a thin, downward-facing, disk element with a curvature 20 closer to the point is attached as flange 5, it is attached to the upper electrode 2. This configuration gives greater flexibility to the flange compared to flange 5 ( Fig. 1]. The flange region 21 is still relatively flat and lies in a disco-shaped plane so that it can be mounted flush with the flange 9 of the ring 8. *
    In FIG. 3 shows another design of the flange 9 of the ring 8. Flane1; 9 is provided with a deep dish-shaped bend 22, which imparts greater elasticity to this flange compared to flange 9 (FIG. 1). If desired, any design of the flanges (Fig. 2 and 3) can be used one with the other or interacting with the flanges 5 and 9 (Fig. 1).
    The flexible insulating ring 17 can be modified for use in conjunction with a silicon semiconductor wafer 1 with an asymmetric cathode configuration and peripheral amplifying electrodes. For this purpose, the central hole in the ring 17 will be
    Ί
    845810 8 to have an asymmetric circuit corresponding to the asymmetric configuration of the cathode contact and the upper electrode 2, intended to contact the cathode contact 5 of the semiconductor wafer. Ring 17 has recesses 23 at its periphery, providing a tight fit of the ring along the inner diameter of the ceramic insulating ring 8 (Fig. 4). There are possible embodiments of devices a (FIG. 5), in which the lower part of the device is identical to the same assembly in the embodiment shown in FIG. 1. However, the flange 9 of the ring 8, 15 to increase its elasticity has a modified configuration and before the final assembly of the device to the flange 9 is attached to the control terminal
    19.2Q
    The upper electrode 2 also has a modified configuration of the flange 5 containing the upper part 24, the lower 25, which are separated from each other by a ceramic disk 26. The ceramic disk .26 must isolate the lower flange 9, which is connected to the control terminal 19 / from upper cathode electrode 2.
    When the lower part 25 of the flange is connected to the flange 9, an open gap is formed between the radial inner regions of the flanges, so that the engagement area through which the control terminal 19 is connected to the 35 lower flange 9 is calm. In addition, the curved shape of the flange 9 improves its flexibility, thus providing better axial movement of the electrodes 2 40 and 3 under the action of compression forces. The modified flange configuration shown in FIG. 5 can be incorporated into the image variations shown in FIG. 1. The device shown in FIG. 5 may include the configuration of the semiconductor wafer AND of the installed ring shown in FIG. 1.
    x 1
    Simplified installation and increased reliability of the device is achieved due to the possibility of installing a semiconductor wafer without damaging it, as well as without the possibility of damage to a fragile control electrode.
    权利要求:
    Claims (2)
    [1]
    The goal is achieved by the fact that in a semiconductor device containing a 1-semiconductor plate clamped between anodic and cathode electrodes provided with annular flanges, and an insulating ring surrounding the semiconductor plate and electrode parts and having on one side an annular flange connected to an annular flange of one from the electrodes and equipped with a means for penting them relative to each other, and on the other hand connected to the annular flax of another electrode, while between the insulating ring and the semi-conductor MY-twinned plate disposed mated from a resiliently flexible insulating material Nogo kupolobraznoe body in which is set, at least adjacent the semiconductor wafer portion of one of the electrodes, means for centering is designed as a three circumferentially spaced and upwardly izoonutyh legs. In addition, the dome-shaped body may have a groove through which the control terminal of the semiconductor core PLY is passed. The dome-shaped body on the side of the insulating ring is provided with recesses. FIG. 1 shows the device, the cross section; in fig. 2 upper electrode with the second option; flange, cross-section; in fig. 3 — bottom electrode with insulating ring with a second flange variant, cross section; in fig. 4 - dome-shaped body with grooves, top view; in fig. device c. a modified flexible insulating ring, a cross section, a semiconductor device (fig. contains a semiconductor plate I, clamped between the upper cathode 2 and, respectively, anode 3 electrodes. In the cathode electrode 2 there is a central hole 4 and a flexible conductor flange 5 of relatively thin material that is soldered to the outer periphery of the electrode 2. The anode electrode 3 is basically similar to the cathode electrode 2 and also has a central hole 6, and its outer surface is connected to the flexible flange 7, for example Semiconductor plate I is placed in an insulating ring 8, made, for example, of ceramics, the outer surface of which is corrugated to increase the distance of the electric leakage, and its upper and lower surfaces are metalized accordingly. by soldering with a flange 9, which has a section 10. A conductive tube 11 passes through the wall of the ring 8, the outer end of which is sealed by a conductive plug 12. The inner region is pumped out through the tube 11 Referring filling device and, if necessary, an inert gas after the device assembly. After that, the tube can serve as a connection point for a control lead that extends outside the ring 8. To the upper part of the tube 1 1 gfisarin or solder on a small strip 13 of nickel-coated copper to form a relatively large mass of metal, which can be, for example, ultrasonic by machining an aluminum control output device that is mounted inside a pressure-assembled housing. The flange 9 is provided with short, upturned and three legs arranged around the circumference (two of them are shown in the drawing - 14 and 15). The leg 15 serves simply as an upwardly facing section of the outwardly bent section 16, which is a connecting clip, for example, for controlling connection to the upper electrode 2. These upward three legs serve as centering means for mounting the flat flange 5 of the upper electrode 2 when mounting the electrodes with respect to each other. The diameter of the upper flange 5 is approximately equal to the diameter formed by the circle, which includes paws 14 and 15 turned upwards. The device also contains a dome-shaped body 17 made of an insulating, resilient and flexible material, for example silicone rubber. The inner diameter of the dome-shaped body 17 is approximately equal to the outer diameter of the semiconductor plate 1, so that the latter can be installed in the ring 17 before assembly. The outer diameter 58 of the wall of the ring 17 is chosen slightly larger than the inner diameter of the ring 8 so that it can be set ring 17 in ring 8; At the base of ring 17, a groove 18 is drawn, which can pass a control terminal 19. In addition, along the outer surface of the ring 17 there are ditches (Fig. 4), which facilitate compression of the ring. when installing the semiconductor wafer between the electrodes. The grooves on the ring 17 also make it possible to eliminate unevenness in the size of the devices by providing a gap for the ring at elevated temperatures without creating a vertical deformation and providing conditions for uniform pressure of the gas in the device at all temperatures. At the time of assembling the device, a semiconductor plate 1 is installed in the ring 17. The inner diameter of the hole in the ring 17 is contoured to mount the upper electrode 2 so that the latter can properly engage with the upper surface of the plate 1. The plate 1 and the ring 17 are pressed into the insulating the ring 8 until the lower surface of the plate 1 comes into good contact with the upper surface of the electrode 3. Then the plate is safely held inside the bowl formed by the lower electrode 3 surrounding the isolator onnym ring 8 and the lower flange 7. In this case, due to the resilience of the flexible ring 17 is eliminated Oping injury plate 1 due et al seny and shock during assembly. Control terminal 19, which is a very fragile element, can be soldered to conductive tube 11 by means of a strip 13 on ring 8, i.e. The control output of the plate is connected to the control output of the housing after the elements to be connected properly and finally brought together. Then, the upper electrode is positioned in a position, some of which is centered by means of an opening in body 17, while electrodes 2 and 3 are automatically centered relative to each other by fitting the flange 5 in the upward-facing legs 14 and 15 of the Flange attached to ring 8 ,and. when necessary, they are pivotally adjusted in the opening of the ring 17. Then, for fastening each other and creating a seal, the engaging tabs 14, 15 and the edges of the flange 5 and section 16 are joined by suitable contact welding. During the closing of the device with the upper electrode, the danger of damage to the semiconductor plate I and the brittle control pin 19 is eliminated. After welding, the semiconductor plate I is firmly installed in the required place relative to the surfaces of both electrodes, regardless of the displacement of the latter by compression or tension. This prevents accidental movement or rotation of plate 1 with respect to electrodes 2 and 3 and ring a, which can cause accidental breakage of the control terminal 19 or other corresponding damage. The flange 5 can be made in the form of a relatively flat metal element. If necessary, the flange 5 may have the shape shown in FIG. 2. To the upper electric arc 2 Sfig. 2) as a flange 5, a thin, downward-facing disc element with a curvature of 20 is attached closer to the point where it is attached to the upper electrode 2. This configuration gives greater flexibility to the flange compared to flange 5 (Fig. 1). The flange area 21 is still relatively flat and lies in a disk-like plane, so that it can be mounted flush with the flange 9 of the ring 8. In FIG. 3 shows another variant of the design of the flange 9 of the ring 8. Flane 9 is provided with a deep dish-shaped bend 22, which gives this lanza a greater elasticity compared with the flange 9 (Fig. 1). If desired, the flange design (Figs. 2 and 3) can be used one with the other or interacting with flanges 5 and 9 (Fig. 1). The flexible insulating ring 17 may be modified to be used in conjunction with a silicon wafer I with an asymmetrical cathode configuration and peripheral amplifying electrodes. For this purpose, the central opening in the ring 17 will have an asymmetrical contour corresponding to the asymmetric configuration of the cathode contact and the upper electrode 2 intended to contact the cathode contact of the semiconductor wafer. The ring 17 has grooves 23 along its periphery providing a flesh-fitting ring on the inside diameter of the ceramic insulating ring 8 (Fig. Possible variants of the device a (Fig. 5), in which the lower part of the device is identical to the same node in the variant shown in Fig. 1. However, the flange 9. of the ring 8, in order to increase its elasticity, has a modified configuration and, before the final assembly of the device, a control terminal 19 is attached to the flange 9. The upper electrode 2 also has a modified configuration of the flange 5 containing the upper Part 24, bottom - 25, which are separated from each other by a ceramic disk 26. A ceramic disk .26 must insulate the bottom flange 9, which is connected to the control terminal 19, from the upper cathode electrode 2. When the bottom part 25 of the flange is connected to the flange 9 , between the radial inner flange regions, an open gap is formed, so that the engagement area over which the control terminal 19 is connected to the lower flange 9 is calm. In addition, the curved shape of the flange 9 improves its flexibility, thus providing a better axial movement of the electrodes 2 and 3 under the action of compression forces. The modified flange configuration shown in FIG. 5 may be inserted into the variants of the image shown in FIG. 1. The device, shown in FIG. 5 may include a figurazinr semiconductor wafer and a mounted ring, shown in FIG. 1. Simplified installation and increase in reliability in the device is achieved due to the possibility of installing the semiconductor wafer without damaging it, as well as without the possibility of damaging the fragile control electrode. Claims. one . A semiconductor device containing a semiconductor plate clamped between anodic and cathodic electrodes equipped with annular flanges, and an insulating ring, surrounding semiconductor plate and electrode parts and having on one side an annular flange connected to the annular flange of one of the electrodes and equipped with means to center them relative to each other, and on the other hand connected to the annular flange of the other electrode, while between the insulating ring and the semiconductor plate ozheno made of a resiliently flexible dome-shaped insulating material body, wherein the set of at least polugfovodnikovoy plate adjacent to part of one of the electrodes of Whitlock Icha .yuschees in that, in order to simplify assembly and increasing HA. reliability, the means for centering is made in the form of three paws arranged circumferentially and bent upwards, 2. The semiconductor device according to claim 1, in the insulating ring of which the control terminal of the housing is connected to the control terminal of the semiconductor plate, characterized in that the dome-shaped the body has a groove through which the control lead of the semiconductor plate is passed. 3. The semiconductor device according to claim 1-2, characterized in that the dome-shaped body on the side of the insulating ring is provided with notches. Sources of information taken into account in the examination, 1. US patent No. 34§9095, cl. 174-52, publ. 1968.
    [2]
    2. US patent No. 3599057, cl. 317-234, pub. 1971 (prototype). 16 15 // // r 4 f0
    I,
    go
    Rig 2
    / J / x
    EZZZZ
    ITML-y
    R
    /
    J
    ig.Z
    / 7
    类似技术:
    公开号 | 公开日 | 专利标题
    SU845810A3|1981-07-07|Semiconducting device
    US5489802A|1996-02-06|Pressure contact type semiconductor device and heat compensator
    US4099201A|1978-07-04|Semiconductor rectifier assembly having an insulating material therein that evolves gases when exposed to an arc
    US4107727A|1978-08-15|Resin sealed semiconductor device
    KR940004782A|1994-03-16|Turn-Off High Power Semiconductor Components
    US3770878A|1973-11-06|Hermetically sealed electrical terminal
    US3831067A|1974-08-20|Semiconductor device with pressure connection electrodes and with headers cemented to insulation ring
    US3736474A|1973-05-29|Solderless semiconductor devices
    US4673961A|1987-06-16|Pressurized contact type double gate static induction thyristor
    JPH02203553A|1990-08-13|Glass-metal case for semiconductor device and manufacture thereof
    KR950034714A|1995-12-28|socket
    US4305087A|1981-12-08|Stud-mounted pressure assembled semiconductor device
    US4956696A|1990-09-11|Compression loaded semiconductor device
    US3719862A|1973-03-06|Flexible contact members for use in high power electrical devices including a plurality of semiconductor units
    US2880383A|1959-03-31|High frequency transistor package
    US3476986A|1969-11-04|Pressure contact semiconductor devices
    US5075588A|1991-12-24|Arc discharge lamp with spring-mounted arc tube and shroud
    US3450962A|1969-06-17|Pressure electrical contact assembly for a semiconductor device
    US3452254A|1969-06-24|Pressure assembled semiconductor device using massive flexibly mounted terminals
    JP3266281B2|2002-03-18|Reverse conducting thyristor device, pressure contact type semiconductor device and semiconductor substrate
    JPH08241956A|1996-09-17|Pressure welding housing of semiconductor element
    US4063348A|1977-12-20|Unique packaging method for use on large semiconductor devices
    KR870001470B1|1987-08-12|A lamp assembly
    US10192800B2|2019-01-29|Semiconductor device
    US3196203A|1965-07-20|Semiconductor device with stress resistant support for semiconductor disc
    同族专利:
    公开号 | 公开日
    CH612540A5|1979-07-31|
    ES448440A1|1977-07-01|
    FR2313774A1|1976-12-31|
    DE2624807A1|1976-12-16|
    NL7605903A|1976-12-06|
    GB1555515A|1979-11-14|
    SE7606179L|1976-12-03|
    US4008486A|1977-02-15|
    FR2313774B1|1980-07-25|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US3058209A|1962-10-16|Method of manufacturing a vacuum tight closure |
    NL240675A|1958-07-02|
    DE1248814B|1962-05-28|1968-03-14|Siemens Ag|Semiconductor component and associated cooling order|
    DE1514152A1|1964-12-16|1969-09-11|Licentia Gmbh|Semiconductor rectifier cell|
    US3337678A|1965-06-30|1967-08-22|John P Stelmak|Sealed microminiature electronic package|
    US3437887A|1966-06-03|1969-04-08|Westinghouse Electric Corp|Flat package encapsulation of electrical devices|
    FR2003573A1|1968-03-09|1969-11-07|Mitsubishi Electric Corp|
    US3599057A|1969-02-03|1971-08-10|Gen Electric|Semiconductor device with a resilient lead construction|
    DE2014289A1|1970-03-25|1971-10-14|Semikron Gleichrichterbau|Disc-shaped semiconductor component and method for its manufacture|
    US3688163A|1970-08-04|1972-08-29|Gen Motors Corp|Cold welded semiconductor package having integral cold welding oil|
    US3654529A|1971-04-05|1972-04-04|Gen Electric|Loose contact press pack|
    US3831067A|1972-05-15|1974-08-20|Int Rectifier Corp|Semiconductor device with pressure connection electrodes and with headers cemented to insulation ring|
    US3918147A|1974-03-25|1975-11-11|Corning Glass Works|Hermetic enclosure for electronic component|JPS5537103B2|1976-10-28|1980-09-25|
    US4131905A|1977-05-26|1978-12-26|Electric Power Research Institute, Inc.|Light-triggered thyristor and package therefore|
    DE2810416C2|1978-03-10|1983-09-01|Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt|Semiconductor component with plastic coating|
    US4257058A|1979-07-05|1981-03-17|Electric Power Research Institute, Inc.|Package for radiation triggered semiconductor device and method|
    GB8410847D0|1984-04-27|1984-06-06|Westinghouse Brake & Signal|Semiconductor housings|
    EP0320618A1|1987-12-14|1989-06-21|BBC Brown Boveri AG|Housing for a GTO power thyristor|
    DE4227063A1|1992-08-15|1994-02-17|Abb Research Ltd|High-performance semiconductor component that can be switched off|
    EP0660396B1|1993-12-24|1998-11-04|Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno|Power MOS device chip and package assembly|
    US5798287A|1993-12-24|1998-08-25|Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno|Method for forming a power MOS device chip|
    DE69321966T2|1993-12-24|1999-06-02|Cons Ric Microelettronica|Power semiconductor device|
    DE69418037T2|1994-08-02|1999-08-26|St Microelectronics Srl|Power semiconductor device made of MOS technology chips and housing structure|
    US7132698B2|2002-01-25|2006-11-07|International Rectifier Corporation|Compression assembled electronic package having a plastic molded insulation ring|
    US6781227B2|2002-01-25|2004-08-24|International Rectifier Corporation|Compression assembled electronic package having a plastic molded insulation ring|
    EP2615240A3|2012-01-16|2014-09-03|Prad Research Development Limited|Tubing Encased Motor Lead|
    USD712940S1|2012-05-17|2014-09-09|Anthony Cerniglia|Locating ring|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    US05/582,610|US4008486A|1975-06-02|1975-06-02|Compression-assembled semiconductor device with nesting circular flanges and flexible locating ring|
    [返回顶部]